High power AlGaN/GaN HEMTs for wireless base station application

AlGaN/GaN-based HEMTs have a great potential for microwave power applications, including wireless base station amplifiers, due to their high breakdown voltage and high saturation velocity. The base station systems demand high-power and high-efficiency amplifiers. Low-distortion characteristics are also required for the base station amplifiers under the modern digitally modulation schemes such as IMT-2000.