Physics and modeling of Ge-on-insulator MOSFETs

We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state I/sub ds/ leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.