Ti/CVD-WSi/sub x//Blanket-W structure for fine contact filling application

The blanket W process for the fine contact size and high aspect ratio has been developed by using the CVD-WSi/sub x/ films as a diffusion barrier. It was found that the CVD-WSi/sub x/ film has good step coverage and effective barrier properties. Low contact resistance of 58 Omega was obtained for the n+ diffusion layer when a contact diameter is 0.6 mu m and the aspect ratio is 3. The Ti/CVD-WSi/sub x//blanket-W structure also has much lower junction leakage compared to the conventional Ti/TiN/blanket-W structure.<>