MIM capacitors model determination and analysis of parameter influence

Metal insulator metal (MIM) capacitors are frequently used in radio frequency integrated circuits. Several Cu-Si/sub 3/N/sub 4/-Cu capacitors were realized in a 0.12 /spl mu/m CMOS technology using damascene architecture, which is compatible with high-K dielectrics. Different others structures were also integrated for calibration and de-embedding. The measurements were carried out from 45 MHz to 40 GHz. The capacitors measurements were de-embedded before modelling the capacitor. Then, the model parameters were analysed in a filter circuit structure to verify the validity of the obtained values and consequently the validity of the proposed method.