Comparison of GTOs and SCRs for high di/dt switching

Tests performed on two different types of thyristors, involute structure silicon controlled rectifiers (SCRs) and anchor structure symmetric gate turn-off thyristors (GTOs), under high current pulse conditions are described. Seven devices were tested. The results of these experiments show that the involute structure SCRs are capable of switching at a higher anode di/dt than the anchor structure GTOs. The involute structure SCRs switched anode current pulses with peak amplitudes of 12 kA, 10 mu s in duration, and with a di/dt of 77000 A/ mu s. The anchor structure GTOs switched anode current pulses with peak amplitudes of 13 kA, 10 mu s in duration, and with a di/dt of 43300 A/ mu s.<>