Analysis of InGaN/GaN VCSELs

We investigate the internal physical mechanisms that have thus far prevented current-injected GaN-based VCSELs from lasing. Advanced device simulation is applied to a previously manufactured device design featuring dielectric mirrors and an ITO current injection layer. Built-in polarization, electron leakage across the active region, and lateral carrier non-uniformity within the quantum wells are identified as major obstacles to lasing. Design improvements are proposed.