Semi-insulating InP wafers obtained by Fe-diffusion

As-cut InP wafers with residual carrier concentration <5times10¹⁵cm^-3, submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 10⁷ Omegacm and mobility in the range 3000-4000 cm² /Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SI LEC indium phosphide