Microwave noise characteristics of InP-based high electron mobility transistors with InGaAs channel and InGaAs/InP composite channel: a comparative study

A comparative study of the microwave noise performance between InP high electron mobility transistors (HEMTs) with InGaAs channel and InGaAs/InP composite channel is performed. Detailed microwave noise characteristics of InP-based HEMT with single channel and composite channel are presented. A model is carried out to extract the noise parameters and study the thermal noise performance of InP-based HEMT. Characterization of noise performance of InGaAs/InP composite channel HEMTs reveals a different bias dependence of NF_min compared to conventional single InGaAs channel devices. The composite channel HEMT shows a lower NF_min at high V_d with a relatively weak V_d dependence. This could be explained under the framework of suppression channel thermal noise due to the electron transfer from InGaAs channel to InP subchannel at high V_d