Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator

In this work, we demonstrate high analog performance of an electroabsorption (EA) lumped-element modulator monolithically integrated with a semiconductor amplifier over a broad temperature and wavelength range. Using the Stark effect (bandedge tuning with bias), the amplified EA modulator exhibits minimal changes in second- and third-order spur-free dynamic range (SFDR) as well as link gain over a 45/spl deg/C range in chip temperature. We further demonstrate tunability of the amplified modulator over 25 nm of wavelength from 1530 to 1555 nm with little-to-no degradation in SFDR, link gain, and noise figure.