Electron injection model for quantized systems: application to Monte Carlo simulation of nanometric MOSFETs

This work presents a general model for the electron injection from contacts into a device active region. The model is developed for cases where the electrons are confined in one or several directions. The implementation of the approach within the semiconductor Monte Carlo technique is discussed. The present contact model can be applied for non-degenerate or degenerate statistics. As an example, we apply our method to a quantum well nano-MOSFET.