Optimization of InGaAsN on GaAs(111)B for semiconductor laser devices

In this work we present our contribution to the optimization of the InGaAsN material grown on misoriented GaAs(111)B substrates. We show the improvement of optical quality after characterization and optimization of plasma parameters. In addition, our growth procedure to avoid N induced damage on the surface is presented. Finally, we show the improvement in the optical emission of InGaAsN p-i-n diodes after post-growth rapid thermal annealing. Our results show that the quality of the material is high enough to start to develop laser devices based on InGaAsN on GaAs(111)B.