Performance and reliability study of Si(111) CMOS subjected to high mechanical stress for smart sensor application

In view of the development of new smart sensors such as silicon microprobes fabricated on Si(111), we explain the performance of Si(111) MOSFETs in comparison with Si(100) MOSFETs. The channel direction effect on the MOSFET performance has been studied for different oriented substrates. Investigation on Si(100) and Si(111) MOSFETs subjected to high mechanical stress was carried out using the 4-point bending method. Sensitivity was estimated for uniaxial longitudinal stress, for compressive stress and tensile stress. Biasing condition effects on stress sensitivity were also studied.