Optimized the breakdown voltage and specific on-resistance of double RESURF TMOS

In this paper, a novel TMOS with very deep trench double RESURF structure to achieve ultra-low specific on resistance is proposed and optimized. The proposed structure has a deep P column (up to the N/sup +/ drain) under the trench gate electrode. The effects of the depth of P column, widths and doping concentrations of both N column and P column are studied by analysis and simulation. According to our analysis and optimization, we have developed a 200 V class low on resistance TMOS with R/sub on,sp/=172 m/spl Omega/.mm/sup 2/ at V/sub GS/=10 V, which shows a reduction in the specific on resistance by 70% compared with the conventional TMOS.