Novel three-terminal photosensitive thyristors and optically-controlled gates

Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<>