The influence of degeneracy in the channel on long-channel MOSFET characteristics

Fermi-Dirac statistics are incorporated into the Pao-Sah model of the MOS transistor. This modification changes the description insignificantly. The comparison of characteristics computed with the use of Fermi-Dirac and Maxwell-Boltzmann statistics shows that the use of the latter causes small errors even in the case of transistors with extremely thin gate oxides.