Carrier multiplication in self-aligned bipolar transistors - applications in process monitoring and failure analysis

A measurement scheme for the extraction of current multiplication data using bipolar transistors is presented. The data so obtained are shown to be in excellent agreement with data derived from BUceo/ BUcbo breakdown measurements. It is found that structures with strongly inhomogeneous collector doping show considerable deviation from MILLER's law. Utilization of the method for detecting local breakdown events is outlined.