Ultrahigh-speed GaAs static frequency dividers

This paper describe the design, fabrication, and testing of high-speed GaAs static divider circuits that operate up to 17.9 GHz at room temperature. The dividers were implemented in both buffered FET logic (BFL) and capacitively enhanced logic (CEL), and were fabricated with 0.2 µm gate length MESFETs, active channels grown with molecular beam epitaxy (MBE), and airbridge interconnects.