Alloying of Al-Cu-Si metallization by rapid thermal annealing

Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10^-7Ω.cm²) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.