A 3-ns GaAs 4K × 1-bit static RAM

A 3-ns 700-mW GaAs 4K × 1-bit static RAM has been developed using tungsten-silicide-gate self-aligned technology with a minimum design rule of 1.5 µm. A GaAs 1K × 1-bit static RAM, developed using the same technology, affords 1.0-ns minimum address access time and 300-mW power dissipation.