Room temperature pulsed operation of AlGaInp/GaInP double heterostructure visible light lasers grown by MOCVD

Room temperature pulsed operation of (Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P/(Al0.3Ga0.7)0.5In0.5P double heterosturcture laser diodes grown by low pressure MOCVD has been achieved for the first time. The lowest threshold current density was 26kA/cm²for a diode with a 22 µm by 160 µm stripe contact. The lasing wavelength was 0.683 µm. Characteristic temperature Toin the expression,J_{th} \infty exp (T/T_{o}), was 72K near room temperature.