Laser-assisted poly-Si resistor fuse utilizing silicon lateral flow

A new technology for redundancy circuit utilizing silicon lateral flow is presented. The lateral flow is induced when Ar⁺laser beam is applied to an electrically pre-heated polysilicon resistor. The polysilicon resistor lies on a 1.0\microm thick SiO²layer having a pair of parallel grooves where the oxide thickness is decreased to 0.1\microm. This technology has many advantages, such as clear cut-off of polysilicon, no blowing-up of cover PSG film, and no necessity for accurate positioning of laser spot.