SOI CMOS circuit performance on graphite strip heater recrystallized material

A CMOS process has been implemented on graphite strip heater recrystallized silicon substrates. The low field electron mobility of 660 cm²/V.sec and hole mobility of 220 cm²/V.sec is obtained. For a gate length of 5 µm and gate oxide thickness of 500 Å, the average inverter delay is 1.85 ns, as obtained from 39 stage ring oscillators with a fan-in and fan-out of 1, operated at 5 V.