A folding principle for generating three-dimensional MOSFET device structures in beam-recrystallized polysilicon films

Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously.