A novel Via Hole P.H.S. structure in K-band power GaAs FET

A novel Via Hole P.H.S. structure with an improved gate width to active area ratio (Wg/Sa) is developed for K-Band power GaAs FETs. The (Wg/Sa) ratio in this structure is increased to four times greater than that in the conventional Via Hole structure reported so far. The resultant 2.4 mm gate width devices with 0.7 µm gate length and 13 °C/W thermal resistance delivered 30 dBm output power with 4 dB gain and 17.2 % power added efficiency at 20 GHz, and 29 dBm output power, 3 2 dB gain, and 11.7 % power added efficiency at 23 GHz.