1.25 Micron injection logic technology

The injection logic technology offers a significant advantage over other bipolar and MOS technologies with respect to its ability to scale to micron and submicron dimensions to improve speed and density and at the same time scale the power. It is demonstrated in this paper that 1.25 micron injection logic gates could be made with speeds in the 1 to 2 ns range operating in the power range of 40 to 80 microwatts. Simulations based on these experimental results show that 0.5 micron injection logic gates can be made with speeds of 300 to 400 picoseconds with the same power.