Electrical characterization of MOSIS-fabricated circuit elements

SPICE parameters and other data useful for analog design were determined for the MOSIS 2 mu m-double-metal double-poly p-well process. The channel-length modulation parameter LAMBDA and noise parameter KF were extracted for various sizes of n- and p-type MOSFETs with poly1 and poly2 gates. the zero-bias threshold voltage, bulk threshold parameters, saturation transconductance, lateral diffusion, and width correction of poly2 transistors were extracted. A vertical bipolar transistor is characterized.<>