GaAs IGFET: A new device for high speed digital ICs

GaAs IGFETs contain large interface state densities at midgap which, in the past have hindered the application of these devices in digital ICs. We have developed circuit techniques to charge these interface states such that the device operates in enhancement mode. These interface charges appear frozen at high frequencies. Ring oscillators and divide by two circuits were successfully fabricated and encouraging performance characteristics were observed. This presents the first reported demonstration of divide by two circuits using GaAs IGFET technology.