Schottky diode magnetic sensor of high sensitiveness

A magnetosensitive device based on the combination of two effects is described: i) the magnetoconcentration effect, ii) the sensitiveness of the reverse saturation current of a Schottky diode to a carrier density excess. The device is fabricated on Germanium slabs and it presents a sensitiveness dV/dB = 25 mV/Gauss[or dV/IdB = 25 V/Gauss A]. This sensitiveness is 200 times higher than that of Hall sensors and larger than that of usual magnetodiodes.