Be implanted GaAs1-xPxlight emitting diodes

Red light emitting diodes (6610 Å at 300°K) have been fabricated in GaAS1-xPx(x\sim38%) by implanting Be at multiple energies chosen to produce a uniform Be profile with a junction depth of about 1 µm. Low temperature photoluminescence and sheet resistivity measurements indicate that annealing the Be implanted GaAs0.62P0.38for 1 hour at 900°C with Si3N4encapsulation reorders the lattice and activates the implanted Be. The Be related luminescence is not observed after about 1.3 µm is removed from the surface, suggesting that there is no significant diffusion of the implanted Be during anneal. From electroluminescence and photoluminescence data the Be acceptor level is estimated to be 20.2 ± 2 meV above the valence band. The red LED's exhibit an external quantum efficiency of1.07 \times 10^{-2}.