Instantaneous temperature profiles inside silicon power devices

Infrared microscopy as a means for observing dynamic thermal processes inside a slice out from a silicon power device has been reported by Burtsev et. al. and refined by Jaecklin and Marek. Since the local emissivity depends on doping, instantaneous free carrier concentration and the optics used, interpretation of these radiation measurements is extremely difficult. In the existing literature it has been based on homogeneous emissivity throughout the sample.