Schottky-gate Gunn-effect digital device

The n-GaAs planar Gunn device with a Schottky-barrier gate near the cathode has been operated by controlling a domain nucleation-notch by means of the increase in the field due to the extension of the depletion layer under the gate. This three-terminal Gunn-effect digital device has several primary advantages such as excellent uni-directivity (more than 30 dB), simplicity in construction and circuit use, and a large trigger capability (more than 100 mA/V).