30-V MMIC power amplifier with novel bias circuitry

High-voltage power amplifiers allow more efficient DC power conditioning and distribution than is possible with low-voltage systems. Results are presented for the first fully monolithic high-voltage FET amplifier, with on-chip power combining and novel bias circuitry. Output power greater than 2 W was obtained with 30-V drain bias at 11 GHz. A power-added efficiency of 34% was also achieved, which is believed to be the best reported for such amplifiers. The bias circuitry developed here allows the high-voltage amplifier to be biased for class AB operation. This will lead to improved DC-to RF conversion efficiency in satellite transponders by allowing the elimination of an electronic power converter or its replacement by a simple voltage regulator.<>