High performance SiGe BiCMOS technology

In this paper, we have reviewed SiGe BiCMOS technology and future map. In addition, we have seen that performance of today's 0.18 /spl mu/m production foundry process with Ft of 150 GHz and Fmax of 200 GHz is approaching performance levels required to address not only RF applications but also emerging applications in the mm-wave through several circuit block examples. Also, SiGe BiCMOS technology focusing on current SiGe device performance and on how device scaling brings about higher speeds in the future is reviewed.