A new method for on-wafer high frequency noise measurement of FETs

A method for determining the equivalent noise resistance and the magnitude of the optimum generator admittance is described. This method is based on the fact that the real part of the correlation admittance can be neglected. It relies on the concept that the four noise parameters in the case of MESFETs and HEMTs (high-electron-mobility transistors) are not independent. A method for determining the noise parameters Gamma /sub opt/ and F/sub min/ without an automatic input tuner is proposed.<>