Photomagnetoelectric effect of Cd-based detector materials

We attempt to utilize a photomagnetoelectric (PME) effect to investigate the recombination and trapping process of high resistivity CdTe and CdZnTe for nuclear detector materials. The PME short circuit current at magnetic fields up to 1 T and photoconductivity were measured for various laser light (lambda=532 nm) intensity at room temperature and 77 K. The recombination lifetime of 4.3 mus for CdZnTe and 4.5 mus for CdTe are estimated at room temperature