Programmable floating-gate CMOS resistors

In this paper, we propose implementations of highly linear floating-gate CMOS resistors that can be fully integrated in CMOS technology. Also, we analyze the second order effects of a single transistor operating in the linear operation regime and apply a linearization technique to suppress these nonlinearities. The resistance of the proposed circuits can be tuned by utilizing Fowler-Nordheim tunnelling and hot-electron injection quantum mechanical phenomena. Finally, we present experimental data from the chips that were fabricated in 0.5 /spl mu/m CMOS process.