A 400Mbps CMOS spatially-modulated photoreceiver for optical storage

This paper presents a modified spatially modulated photodetector with greater efficiency for optical storage. The spatially modulated structure reduces intersymbol interference by cancelling the effect of photo-carriers generated deep in the substrate. Detector efficiency is enhanced by reducing the covered portion of the detector. Measured results from a chip fabricated in a standard 0.35 /spl mu/m CMOS process, incorporating the proposed photodetector, transimpedance amplifiers, and differential amplifier, show a responsivity of 0.19 A/W and a bandwidth of 300 MHz.