The optimum magneto-current of collector in a silicon base spin valve transistor

New samples of a new type of spin transistor consisting of a metallic pseudo spin-valve emitter, a copper base, and a Si (100) p-n junction collector were made. For better operating conditions, the magneto-resistance between the emitter and base (MR/sub EB/) had different ratios. The value of MR/sub EB/ is an important factor for better magneto-current (MC) ratios; however, the working range for the emitter bias, V/sub E/, is largely improved and the maximum of MC could be enhanced by one order of the magnitude of MR/sub EB/.