Influence of Si-codoping on YAG:Ce scintillation characteristics

A set of undoped, Ce/sup 3+/-doped and Si/sup 4+/-codoped Y/sub 3/Al/sub 5/O/sub 12/ (YAG) single crystals were grown by the Czochralski method and submitted to /spl gamma/ irradiation in the dose range 1-236 Gy at RT. Their irradiation induced absorption coefficient was calculated and analyzed. Crystals also underwent light yield (LY) and scintillation decay measurements using the /sup 241/Am and /sup 22/Na radioactive sources, respectively, in 1 /spl mu/s time gate. The induced absorption at 550 nm (at the Ce/sup 3+/ luminescence peak) decreases with Ce concentration and further decrease is obtained in the Si/sup 4+/-codoped samples. LY values are independent on the Ce/sup 3+/ concentration within 0.12% - 0.3% and on the moderate Si/sup 4+/ codoping as well.