Highly controllable electrochemical deep etching process on silicon

Electrochemical etching processes due to their low cost and high aspect ratio achievable are a very attractive alternative for deep etching of silicon. In this paper, a highly controllable process with more tolerance for structure design is investigated. Various distributions of design patterns, as well as different experimental conditions, such as light illumination, current modulation and experimental temperature are investigated. An electrochemical etching process in the presence of a magnetic field is also evaluated as a possibility to constrain the boundary effect.