High power handling RF MEMS design and technology

RF microelectromechanical (MEMS) switches are usually limited in term of power handling. Self actuation and electro migration constitute indeed the main failure mechanisms related to medium and high RF power. To overcome these malfunctions, an original MEMS topology based on the use of two bridge levels is proposed in this paper. Both appropriate design and technology have been developed in order to enhance power capabilities of MEMS switches. A power handling of 8W in cold switching has finally been reached.