Ion implanted X-band IMPATT/TRAPATT back-to-back diodes

High-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation. Typical peak power of 8-12 W at 20-29-percent efficiency has been consistently achieved in a coaxial cavity. The highest power level obtained to date was 15-W peak, 21.5-percent efficiency at 8.1 GHz.