Work function difference between p-type polycrystalline silicon and n-type single-crystal silicon

The work function difference between p-type polycrystalline silicon and n-type single-crystal silicon has been found from flat-band measurements on MNOS capacitors to be +1.55 V when the concentration in the p-type silicon is 10¹⁹atoms/cm³and the concentration in the n-type silicon is 10¹⁵atoms/cm³.