Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

The polarization field of barrier-doped In/sub 0.06/Ga/sub 0.94/N/Al/sub 0.1/In/sub 0.02/Ga/sub 0.88/N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180/spl deg/ phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.