Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

We investigate GalnP/GaAs high electron mobility transistor structures grown in a production MBE system, with different interface commutation procedures. They have been designed to be very sensitive to the interface quality. They have been characterized by Hall measurements and photoluminescence. GaP-type and GalnAs-type interfaces can be distinguished. Best mobility results occur for few second or even no growth interruption, demonstrating the very low As memory effect of this large system.