Conductivity to first SBD of a stress induced leakage path in ultrathin thermal oxides

The properties of detect current at first SBD is studied under constant voltage stress (CVS). It is experimentally shown that the logarithm of the conductivity as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity and time-to-breakdown are also strongly correlated, and obey a simple reci-symmetrical law.