The characteristics of Ni (Pt) Si/Si Schottky barrier diode with deep trench

In this paper, Ni(Pt)Si film is formed using the structure Ni/Pt/Ni/Si after the RTA, and the sheet resistance of Ni(Pt)Si film is rather low during 600-850/spl deg/C. The transformation temperature from low resistance phase to high resistance phase is 150/spl deg/C higher than that of NiSi film. Ni(Pt)Si/Si Schottky barrier diode, which goes through 850/spl deg/C RTA, has good I-V characteristics. The corresponding Schottky barrier height /spl Phi//sub B/ of 0.71eV is obtained. We think that the film of Ni(Pt)Si has better stability than NiSi. The experiment shows that the deep trench to replace guard ring in Schottky diode can greatly increase the reverse breakdown voltage of the device. When the impurity concentration in epitaxial substrate is 5e15cm/sup -3/ the breakdown voltage of device with deep trench is up to 80 V, while device with guard rings is only 50V.