Scaling capability of GOI and SOI devices

The scaling capability of germanium-on-insulator (GOI) and silicon-on-insulator (SOI) is investigated. The results suggest that GOI is more suitable for low operating power applications than SOI, and can relax the stringent requirement of the film thickness by up to 160%. Compared with SOI, the channel length limitation of GOI can be relaxed by /spl sim/30% with the same film thickness. The intrinsic delay of GOI is smaller than that of SOL At the same intrinsic delay, the off-state current of GOI is 3 /spl sim/ 4 orders of magnitude lower than SOI. However, when the channel length scales down below 20nm and the film thickness is smaller than 5nm. GOI loses its advantages over SOI.