255 nm interconnected micro-pixel deep ultraviolet light emitting diodes

We report on AlGaN based deep ultraviolet (UV) light emitting diodes (LED) with a micro-pixel design and emission at 255 nm. The micro-pixel design was adopted to improve the lateral current spreading and to reduce the operation voltages. For a 10/spl times/10 interconnected 25 /spl mu/m diameter micro-pixel design the device series resistance as low as 17.5 Q was measured. For a packaged LED, output powers of 0.9 mW at 160 mA dc and 3.4 mW at 240 mA pulse pump currents were measured.