A self-consistent quantum mechanical simulation of p-channel strained SiGe MOSFETs

In this paper, the authors investigate hole current enhancement in a 25 nm strained SiGe p-channel MOSFET using a fully self-consistent Schrodinger-Monte Carlo-Poisson transport model. The 2D carrier eigenstates are constructed from the solution of the 1D Schrodinger equation along the depth direction, with each slice along the length direction having different set of 1D eigenstates. In most previous approaches, the carriers in the source and drain regions have been treated as 3D particles which requires special treatment of the carriers at the 3D /spl rarr/ 2D interface in order to conserve carrier energy and momentum. In this paper, to avoid this complication and to minimize the errors that are introduced with this approach, the authors extended the quantum simulation domain into the source and drain regions so that no special treatment is needed at the channel boundaries. Furthermore, von Neumann boundary conditions are employed to obtain proper charge density in the ohmic contacts and Dirichlet boundary conditions have been used in the channel region of the device.